• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to a sample table (100) for processing a sample (104) in an ion beam etching apparatus, having at least one positioning arrangement (101, 102, 103) which has a receiving device (106) and a mask (105), wherein a sample is present in the receiving device (106) (104) is mountable with respect to an ion beam directed toward the sample stage (100) during an ion beam etching process, and wherein the sample (104) is positionable relative to the mask (105), the sample table (100 ) is configured as a changeover table and has at least two positioning arrangements (101, 102, 103) and a mechanism (107) which permits a change between positions in which one of the positioning arrangements (101, 102, 103) on the sample table (100) is alignable with the ion beam of the ion beam etching apparatus, wherein the sample (104) in the positioning assembly (101,102,103) the Ionenstra hl, whereas the respective remaining positioning arrangements (101, 102, 103) face away from the ion beam, and wherein the positioning arrangements (101, 102, 103) are arranged in a common receptacle. The invention further relates to a method for sequentially preparing at least two samples in an ion beam etching system using the sample stage according to the invention.
    公开号:AT510606A4
    申请号:T168/2011
    申请日:2011-02-09
    公开日:2012-05-15
    发明作者:Thomas Pfeifer；Heinz Plank
    申请人:Leica Mikrosysteme Gmbh；
    IPC主号:
    专利说明:

    PI 1944
    Apparatus and method for sample preparation
    The invention relates to a sample stage for processing a sample in an ion beam etching apparatus, having at least one positioning arrangement comprising a recording device and a mask, wherein in the recording device a sample with respect to an ion beam which is directed towards the sample table during an ion beam etching process , mountable, and wherein the sample is positionable relative to the mask.
    The invention further relates to a method for sample preparation in an ion beam etching system.
    Ion beam etching is a commonly used method of preparing samples whose structure is typically subsequently examined in scanning electron microscopy (SEM) and transmission electron microscopy (TEM). This technique finds particular application in research, materials research and quality control of many materials such as semiconductors, metals, ceramics, plastics and the like. To carry out the method, the samples are mounted on a sample stage of a Ionenstrahlätzanlage and adjusted in the beam path of one or more ion beams. Ion beam etching systems are typically high vacuum systems that operate at a base pressure of 10 fi mbar. As ions, argon ions are usually used at an acceleration voltage of 1 to 10 kV. The quality of the image resolution in the electron microscope is very much dependent on the quality of the prepared sample. In particular, ion beam quench etching, ion polishing of SEM samples, wire shadowing, and ion beam preparation of standard TEM samples are among the known ion beam etching techniques. While the latter two methods are used for TEM samples, the ion beam slope set is used to make SEM cross-section samples. In slope etching, profiles of the sample are exposed to the ion beam, with a portion of the sample protected by a mask located on the surface of the sample or adjusted to the surface of the sample from erosion by the ion beam. An ion beam embankment etching process has proved to be particularly effective in the production of high-quality SEM samples, in which at least two ion beams, preferably three ion beams, are guided onto the sample surface at a predetermined angle to one another. This method is disclosed in WO 2008/106815 A2. * t * · * ν Μ Μ · PI1944; * • »*« ··· ·· «* * *» * «I« * * * # · «t * · # · φ # · III I Μ f · I I 4 ·· -2-
    The Ionstrahlätzanlagen known from the prior art or currently on the market have the disadvantage that after each etching a manual sample change is necessary. In most cases, a sample change requires venting and opening the vacuum gun and re-applying the vacuum. In the case of ion beam etching systems, which work with a sluice, an inward and outward transfer is necessary with each sample change. These lock operations also require aeration and venting of plant areas. Such sample changes are time consuming and lead to a lower equipment utilization, lower sample throughput and consequently lower efficiency. Furthermore, it is not possible to continuously charge such devices for a prolonged period of time (e.g., overnight) without the need for a manual sample change by an operator. In addition, each sample change due to the aeration is a contamination possibility with air particles, whereby a device service at shorter intervals is necessary.
    It is therefore an object of the invention to eliminate the disadvantages known from the prior art. In particular, should be achieved with the invention, a better device utilization and thus higher efficiency and the number of sample changes are kept as small as possible.
    This object is achieved in that the sample table is designed as a changeover table and has at least two positioning arrangements and a mechanism that allows a change between positions, in each of which one of the positioning arrangements on the sample table to the ion beam of Ionenstrahlätzvorrichtung is alignable, wherein the sample in the positioning arrangement is exposed to the ion beam, whereas the other positioning arrangements are facing away from the ion beam, and wherein the positioning arrangements are arranged in a common recipient.
    Thanks to the invention, no ventilation and opening of plant areas, e.g. the vacuum chamber, after each sample preparation more necessary. This can only be done after all samples have been finished by ion beam etching. Since the positioning arrangements are arranged in a common recipient, the samples mounted thereon can be prepared one after the other without having to break the vacuum. Also, non-use times are significantly reduced as utilization of the ion beam etching equipment over an extended period of time (e.g., overnight) is possible without requiring manual intervention by the operator to change samples.
    Pt 1944 • »
    -3-
    The sample table is preferably mounted in a flange housing which can be vacuum-tightly connected to the vacuum chamber of an ion beam etching system. By changing the positioning of the positioning arrangements, the samples may preferably be sequentially exposed to the ion beam. While a sample is exposed to the ion beam and is prepared (processing position), the remaining samples are facing away from the ion beam (waiting position). After completion of the preparation, the prepared sample changes from the processing position to the waiting position and a sample, which has previously been turned away from the ion beam and still to be prepared, from the waiting position to the processing position.
    The sample preparation by means of ion beam etching is preferably carried out sequentially. Furthermore, after a first preparation operation of each sample in a first pass, it is possible to perform a second or further preparation pass of all or selected samples, without the need for a manual sample change, which involves aeration and opening of plant areas. For example, when processing heat-sensitive samples, there is often a need to pause during ion beam etching to preserve the sample. Thanks to the invention, heat-sensitive samples can therefore be changed to insert the break in the waiting position and then finished in a second or further preparation pass. In certain applications, it may be necessary to cool heat-sensitive samples that are in the waiting position. Cooling devices for ion beam etching systems are known to the person skilled in the art. For certain samples it may also be necessary, after the ion beam etching process, which is usually carried out with a high energy ion beam, to process the sample briefly with a lower energy ion beam. By working with a lower energy ion beam, a cleaning effect of the previously exposed sample surface is achieved. Thanks to the invention, it is possible to process a larger number of samples in any order with different preparation parameters.
    The sample table comprises at least two positioning arrangements, preferably at least three or more positioning arrangements. The more positioning arrangements the sample table has, the higher the utilization of the installation. For example, sample tables with up to 10 positioning arrangements are favorable, since the sample table has a handy dimension despite high utilization of the ion beam etching system and necessary maintenance intervals, eg. B. for the ion source, can be maintained. However, this does not exclude that the sample table may also comprise more than 10 positioning arrangements. -4-
    In a preferred embodiment, the sample table comprises a turntable rotatable about a rotation axis, wherein the positioning arrangements are preferably arranged at equal angles to each other on the rotatable turntable and the positioning arrangements are preferably aligned sequentially to the ion beam by rotating the turntable. By rotating the turntable, the positioning arrangements with the samples mounted therein thus change to the processing position or to the waiting position. This embodiment is particularly compact and moreover has the advantage of accommodating a large number of positioning arrangements in a space-saving manner on the sample table. In a first sub-variant in the manner of a horizontal turntable or Probenkarussels the axis of rotation of the turntable is aligned substantially vertically. In a second sub-variant in the manner of a vertical turntable, the axis of rotation of the turntable is aligned substantially horizontally.
    In another advantageous embodiment of a sample stage according to the invention this comprises a movable, elongated support, wherein the positioning arrangements are arranged lengthwise, preferably at regular intervals, on the elongated support and the positioning arrangements are aligned by moving the support in the longitudinal direction sequentially to the ion beam ,
    In a preferred sub-variant, the support is designed as a sliding rail, on which the positioning arrangements are fastened.
    In order to enable an accurate and targeted positioning of the respective positioning arrangement to the ion beam, the sample table for rotating the turntable or for moving the support on a controllable drive. The control of the drive via a controller in a known manner. The drive can be arranged outside or inside the vacuum. In a preferred variant, the drive is a controllable gear drive whose operation is well known to those skilled in the art. For example, a drive gear of the drive engages in a toothing located on the outer edge of the turntable for rotating the turntable. For longitudinal movement of the support engages a drive gear of the drive, for example, in a along the support along extending teeth. In a further variant, the drive can act directly on the drive axle of the turntable. Furthermore, it is also possible to move the turntable by means of a vacuum suitable toothed belt. Vacuum-compatible toothed belts are known from the prior art. During the ion beam etching process, material is continuously removed from the sample in the processing position by means of the ion beam. It consists of the * «* * φ * * * ··· * * Φ * Μ * * * * * * Φ I * * * Ρ11944 * ·: * * *
    Risk of these particles depositing on the waiting sample and thus contaminating it, which may affect the quality of the samples. In order to protect the position of the positioning of the ion beam remote from contamination, it is therefore of great advantage, if at least one protective separation at least between the respective one positioning arrangement, which is aligned with the ion beam of the ion beam etching, and the other positioning arrangements, which are remote from the ion beam is arranged. With regard to the material properties of the protective partition, it is important that it is made of a vacuum-compatible and easy-to-clean material. Such vacuum-compatible materials are known to the person skilled in the art. Since the protective separation during the ion beam etching process is also at least partially exposed to the ion beam, it should be a material with a very low etch rate to minimize wear. In practice, carbides, especially steel, have proven to be particularly advantageous.
    In a first variant, the protective partition is permanently arranged on the sample table. Preferably, it is welded to the sample table or permanently connected by screwing or other fastening mechanisms with the sample table.
    In a further variant, the protective separation is arranged positionable. In a first sub-variant of a positionable protective partition, this comprises a folding, sliding or pivoting cover, which can be opened and closed by means of a spring mechanism. These are, for example, to understand covers that release an opening by moving, Vcrschwenken or flaps of the cover or by compressing the cover in the manner of a bellows, thereby enabling a change of the positioning arrangements. The spring mechanism can be triggered by moving the sample table, for example, either by a moving positioning arrangement or by means of a lever, whereby the cover releases an opening. Once the next positioning assembly is changed to the machining position, the cover closes by spring force again.
    In a second variant, the positionable protective separation comprises a cover, which has vacuum-compatible, substantially vertically extending, overlapping lamellae or bands in the manner of a lamellae curtain. The slats are movable. When changing the positioning of the positioning assemblies, the positioning assemblies may pass through the blades of the protective partition cover.
    In a third variant, the positionable protective partition comprises at least one hinged, sliding or swiveling cover, which has its own drive for opening and% * * * f *
    V
    Close is assigned. Including as in the above variant both covers are to be understood, which release an opening by moving, pivoting or folding the cover or by compressing the cover in the manner of a bellows, thereby enabling a change of the positioning arrangements. A disadvantage of this variant compared to the above-mentioned variant with the spring mechanism is that there is a major technical control effort, since the opening and closing of the cover must be synchronized with the timing of changing the positioning arrangements.
    In an implementation that is simple to implement, each positioning arrangement is separated from the respectively adjacent positioning arrangements by a protective partition. Appropriately, this variant is used, in which the protective separation is permanently arranged on the sample table.
    A special embodiment of the sample stage according to the invention provides exactly three positioning arrangements, which are arranged on the turntable at an angle of 120μ, wherein between the three positioning arrangements in each case a normal to the turntable arranged and extending radially to the axis of rotation protective separation is arranged.
    The sample table according to the invention is preferably arranged in a flange housing, which is designed as a vacuum flange. The flange housing with the sample table disposed therein is referred to herein as a sample table flange. Consequently, the invention also relates to a sample stage flange comprising a sample stage according to the invention as described above.
    The invention further includes a method for sequentially preparing at least two samples in an ion beam etching system to which the sample stage according to the invention is applied.
    The method according to the invention comprises the following steps: (a) fixing the samples in the at least two positioning arrangements of a sample stage according to the invention, manually adjusting the samples in the respective positioning arrangements, (b) arranging the sample table in the recipient, ". «· ·« • '· · · · · «* pi 1944; ·· · · · ···!» · * ·) | (C) aligning one of the positioning arrangements with the ion beam by moving the sample stage exposing the sample in the positioning arrangement to the ion beam, while leaving the other positioning arrangements away from the ion beam, and by ion milling the sample exposed to the ion beam (d) changing the positions by moving the sample stage and aligning the next positioning assembly with the ion beam and preparing the sample by ion beam etching; (e) repeating steps (c) and (d) until all samples have been prepared by ion beam etching; f) optionally repeating steps (c) to (e).
    Preferably, the changing of the positions in step (d) is sequential, i. the samples are prepared in sequential order.
    As can be clearly seen from the process steps, prior to placing the sample stage in the recipient, that is, before sealing the vacuum chamber and applying the vacuum, all samples are manually adjusted in the respective positioning arrangements (step (a)). The masks preferably have a fixed position in the positioning assemblies. The samples are positioned relative to the respective masks. During the ion beam etching process, the respective adjusted sample-mask unit is positioned by changing the positions relative to the ion beam and the sample is processed with the ion beam. As mentioned above, all or selected samples can also be processed multiple times in two or more passes.
    In the following, the invention, together with further advantages, will be explained by means of non-limiting exemplary embodiments, which are illustrated in the attached drawings. The drawings show:
    1 is a perspective view of a first embodiment of a rotatable sample table according to the invention with a vertical axis of rotation and with a total of three positioning arrangements,
    FIG. 2 shows a perspective view of a sample table flange with the sample table of FIG. 1 arranged therein; FIG.
    3 is a side view of an opened Ionenstrahlätzanlage with the mounted therein sample stage flange of FIG. 2 in a first, tilted by 90 ° adjustment position, «r« »« * * · · ** 4 · »* 1 *» 1 * * t * b * * pi 1944; * * ♦ »*« «* ·· * ·» iii -8-
    4 shows the ion beam etching system from FIG. 3, wherein the sample table flange is pivoted into a second adjustment position, FIG.
    5 shows a section through the closed vacuum chamber of the ion beam etching system of FIGS. 3 and 4, the sample stage flange being in the operating position, FIG.
    6 is a plan view of a second embodiment of a rotatable sample table according to the invention with a vertical axis of rotation and a plurality of positioning arrangements,
    7 is a side view of a third embodiment of a rotatable sample table according to the invention with a horizontal axis of rotation and a plurality of positioning arrangements,
    8 shows a side view of a fourth embodiment of a rotatable sample table according to the invention with a horizontal axis of rotation and a plurality of positioning arrangements, and
    9 shows a side view of a fifth embodiment of a sample table according to the invention in the form of a sliding rail.
    1 shows a first embodiment of the invention in the form of a rotatable sample table 100 for an ion beam etching system which is rotatably mounted about a vertical axis of rotation L (horizontal turntable). The sample table comprises a turntable 107, on which a total of three positioning arrangements 101, 102, 103 are arranged offset at an angle of 120 ° to one another. The structure of the individual positioning arrangements 101, 102, 103 is known per se to a person skilled in the art and is designed for an ion beam embankment etching method, as described in WO 2008/106815 A2. Each positioning arrangement 101, 102, 103 comprises a recording device 106 adjustable in two planes, on which a sample 104 can be mounted, and a mask holder 108 with a mask 105. Between the three positioning arrangements 101, 102, 103, there is a respective protective partition 109a arranged normal to the rotary disk 107 and extending radially to the axis of rotation , 109b, 109c are arranged in the form of a metal mudguard. As can be better seen in FIGS. 2 and 5, the protective partitions 109a, 109b, 109c have the tendency to prevent soiling of the positioner assemblies 101, 102, 103 in the waiting position by the sample material removed during the etching process. For the rotation of the sample table 100, a gear drive 110 is associated with it, wherein a drive gear 111 is inserted into a PI1944 located on the outer edge 112 of the rotary disk ♦ φ · I I♦♦♦♦♦♦♦♦-----------♦♦-- PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI.
    Toothing (not shown) engages.
    Fig. 2 shows a perspective view of a sample stage flange 120 with the sample stage 100 of Fig. 1 mounted therein. As can be clearly seen in Fig. 2, only one of the positioning assemblies 101, 102, 103 is exposed to the outside and thus to the ion beam (processing position) the remaining positioning arrangements 101, 102, 103 are arranged in the flange housing 121 of the sample table flange 120 and thus are in the waiting position. In Fig. 2, the positioning assembly 101 is in the machining position while the positioning assemblies 102, 103 are within the flange housing 121 in the standby position. By rotating the sample table 100 through an angle of 120 °, the positioning assemblies 101.102.103 change position, i. they change from the waiting position to the processing position or from the processing position to the waiting position, wherein the change preferably takes place sequentially. The respective positioning arrangements 101, 102, 103 in the waiting position are protected by the corresponding protective partitions 109a, 109b, 109c from being contaminated by the removed sample material produced during the etching process.
    3 and 4 each show side views of an opened Ionenstrahlätzanlage 200 with the mounted therein sample table flange 120 of FIG. 2. The sample stage 120 is vacuum when starting the Ionenstrahlätzanlage 200 vacuum-tight to the vacuum chamber 201 (recipient), in which the ion sources are arranged , connected (see Fig. 5, which shows a section through a closed vacuum chamber 201 with connected sample stage flange 120). The three samples 104 are mounted on the positioning assemblies 101, 102, 103 of the sample stage 100 prior to application of the vacuum and prior to initiation of the ion beam etching process, and then manually adjusted relative to the respective masks 105. The adjustment takes place on the one hand by exact mounting (gluing) of the sample 104 on the respective receiving device 106 and in relation to the fixedly positioned mask 105 by means of positiorüerschrauben. The preliminary adjustment of the samples allows for preferably sequential ion beam etching of all samples in one pass or, if necessary, all or selected samples in a second or further pass. In FIG. 3, the sample table flange 120 is in a first, tilted by 90 ° adjustment position. 4, the sample table flange 120 is in its second adjustment position, wherein this adjustment position also represents the position in which the sample table flange 120 is subsequently displaced horizontally by means of a mounting rail 204 in the direction of the vacuum chamber 201 and connected to it in a vacuum-tight manner. For sample adjustment, the ion beam etching system 200 further has a binocular 202. * * * * * T * * * * ···· »*» * »» ·· * PI1944 ...... ♦ · * · «* * # * * * * * *» ..... 4 «· -10-
    After loading and adjusting the three samples, the sample stage flange 120 is connected to the recipient of the ion beam etcher 200 and the sample chamber for producing a high vacuum (usually at least 10 b mbar) is pumped out. FIG. 5 shows a top view through a section through the closed vacuum chamber 201 with connected sample table flange 120, the sample table 100 being highlighted. The positioning assembly 101 is in the machining position while the remaining positioning assemblies 102 and 103 are in the waiting position. The etching process takes place in accordance with the abovementioned ion beam embankment etching method from WO 2008/106815 A2. Accordingly, as described in WO 2008/106815 A2, three ion beams integrated in an ion source 203 are guided at a predetermined angle to each other on the sample surface of the sample 104 of the positioning assembly 101. The samples are prepared sequentially by placing the positioning assemblies 101, 102, 103 in the respective processing and waiting positions, respectively, by rotating the sample stage.
    6 shows a plan view of a second embodiment of a rotatable sample table 300, which, like the sample table 100, is likewise designed as a carousel-like horizontal turntable with a vertical axis of rotation, but has a multiplicity of positioning arrangements (301, 302, 303, 304, 055) offset by the same angle and arranged on a turntable 307 ... n). For example, up to 10 positioning arrangements (n < 10) can be placed on the turntable 307 because, in this way, despite high utilization of the ion milling apparatus, the sample table 300 has a handy dimension and necessary maintenance intervals, e.g. B. for the Ionenquellc, can be maintained. The positioning arrangements of the sample table 300 correspond in their basic structure to the positioning arrangements 101, 102, 103 described above. The positioning assembly 301 is in the machining position while the remaining positioning assemblies are in the waiting position. For rotating the sample table 300, a toothed wheel drive 110 described above is also associated therewith. The arrow 306 represents the direction of rotation of the sample table 300 when changing the positions and the arrow 309 the direction of the ion beam which is directed onto the sample mounted in the positioning arrangement 301. The turntable 307 with the positioning arrangements is arranged in a protective housing 308a, the positioning arrangement in the processing position (here positioning arrangement 301) being located outside the protective housing 308a, exposed to the ion beam and further by two positionable, angularly arranged protective covers 308b, 308c (FIG. dashed lines) is shielded from the other positioning arrangements. The protective covers 308b, 308c, as described in detail above, can be designed as hinged, swiveling or sliding covers, for example in the form of folding doors which can be opened and closed by means of a spring mechanism or by means of a drive.
    Fig. 7 shows a side view of a third embodiment of a rotatable sample table 400, which is designed as a revolver-like vertical turntable with a horizontal axis of rotation. The sample table 400 has a multiplicity of positioning arrangements (401, 402, 404, 405,... N) arranged at equal angles to one another and arranged on a turntable 407. For example, up to 10 positioning arrangements (n < 10) can be arranged on the turntable 407 since, in this way, despite high utilization of the ion beam etching equipment, the sample table has a handy dimension and necessary maintenance intervals, e.g. The positioning arrangements of the sample stage 400 correspond in their basic structure to the positioning arrangements 101, 102, 103 described above. The positioning assembly 401 is in the machining position while the remaining positioning assemblies are in the waiting position. For rotating the sample table 400, a gear drive 110 described above is also associated therewith. The arrow 406 represents the direction of rotation of the sample table 400 when changing the positioning. The ion beam exits through the outlet opening 409 (shown in plan view) and is directed to the mounted in the positioning assembly 401 sample. The positioning arrangements are arranged on the turntable 407 such that the ion beam is directed parallel to the horizontal axis of rotation of the turntable and normal to the plane of the turntable 407. As described above in FIG. 6, also in this embodiment, the turntable 407 is arranged with the positioning assemblies in a protective housing 408a, wherein the positioning assembly in the processing position (here positioning assembly 401) is outside the protective housing 408a exposed to the ion beam and further through two positionable, angled protective covers 408b, 408c (dashed lines) are shielded from the remaining positioning assemblies. The protective covers 408b, 408c may, as described in detail above, be designed as hinged, swiveling or sliding covers, for example in the form of flap doors which can be opened and closed by means of a spring mechanism or by means of a drive.
    Fig. 8 shows a side view of a fourth embodiment of a rotatable sample table 500, which is designed as a revolver-like vertical turntable with a horizontal axis of rotation. The basic structure corresponds to that of the sample table 400 (see FIG. 7). The sample table 500 differs from the sample table 400 in that the positioning arrangements (501, 502, 503.504, 505, ..., n) are arranged on a turntable 507 such that the ion beam is normal to the horizontal rotation axis. For example, up to 10 positioning arrangements (n < 10) can be placed on the turntable 507 because PI1944 PI1944 «»
    In spite of high utilization of the ion beam etching system, the sample table has a handy dimension and observes necessary maintenance intervals, eg, for the ion source. The arrow 506 shows the direction of rotation of the sample table 500 when changing the positioning and the arrow 509, the direction of the ion beam, which is directed to the mounted in the positioning assembly 501 sample. For rotating the sample table 500, a gear drive 110 described above is also associated therewith. In this embodiment too, the turntable 507 with the positioning arrangements is arranged in a protective housing 508a, the positioning arrangement being located outside the protective housing 508a in the processing position (here positioning arrangement 501), exposed to the ion beam and furthermore by two positionable protective covers arranged substantially parallel to one another 508b, 508c (dashed lines) is shielded from the remaining positioning arrangements. The protective covers 508b, 508c may, as described in detail above, be designed as folding, pivoting or sliding covers, for example in the form of folding doors which can be opened and closed by means of a spring mechanism or by means of a drive. The protective covers 508b, 508c may also be designed as vacuum-compatible, substantially vertically extending, overlapping lamellae or bands in the manner of a lamella curtain.
    9 shows a side view of a fifth embodiment of a sample table 600. The sample table comprises a reversibly longitudinally displaceable, elongated sliding rail 607. The positioning arrangements 601, 602, 605, 605, ..., n are mounted at regular intervals on the slide rail 607 lengthwise and moved by moving the Slide rail 607 in the longitudinal direction (arrow 606) sequentially to the ion beam (shown as a top view of the opening 609 of the ion beam) are aligned. For example, up to 10 positioning arrangements (n < 10) can be arranged on the sliding rail 607, because in this way, despite high utilization of the ion beam etching equipment, the sample table has a handy dimension and necessary maintenance intervals, eg. B. for the ion source, respected. For moving the slide rail 607 in the longitudinal direction, the sample table 600 is associated with a gear drive 110 described above, wherein a drive gear engages in a toothing located on the slide rail. In this embodiment, the slide rail 607 is arranged with the positioning arrangements in a protective housing 608 a. The protective housing 608a is dimensioned larger in the longitudinal direction than shown in Fig. 9 (indicated by dash-dotted lines) to allow longitudinal displacement of the slide rail 607 in both directions. The positioning assembly in the machining position (here positioning assembly 603) is located outside of the protective housing 608a, exposed to the ion beam, and further shielded from the remaining positioning assemblies by two positionable, substantially parallel, protective covers 608b, 608c (dashed lines). The Schutzabde P11944 • * • * • ·
    As shown in detail above, slits 608b, 608c can be designed as hinged, swiveling or sliding covers, for example in the form of flap doors which can be opened and closed by means of a spring mechanism or by means of a drive. The protective covers 608b, 608c can also be designed as vacuum-compatible, essentially vertically extending, overlapping lamellae or bands in the manner of a lamellae curtain.
    The above-described implementations of the invention are only examples of many, and thus are not to be considered as limiting.
    Vienna, the
    i!
    权利要求:
    Claims (18)
    [1]
    PI 1944

    • «» * »

    1. A sample table (100) for processing a sample (104) in an ion beam etching apparatus, comprising at least one positioning arrangement (101, 102, 103), which has a receiving device (106) and a mask (105), wherein in the receiving device (106) a sample (104) is mountable with respect to an ion beam directed towards the sample stage (100) during an ion beam etching process, and wherein the sample (104) is positionable relative to the mask (105), characterized in that the sample table (100) is designed as a change-over table and has at least two positioning arrangements (101, 102, 103) and a mechanism (107) which permits a change between positions in which in each case one of the positioning arrangements (101, 102, 103) on the sample table (100) closes is alignable with the ion beam of the ion beam etching apparatus, wherein the sample (104) in the positioning arrangement (101, 102, 103) is exposed to the ion beam, whereas the respective remaining positioning arrangements (101.102.103) face away from the ion beam, and wherein the positioning arrangements (101.102.103) are arranged in a common receptacle.
    [2]
    2. sample table according to claim 1, characterized in that the sample table comprises a rotatable about a rotation axis turntable, wherein the positioning arrangements are preferably offset by equal angles to each other on the rotatable hub and the positioning arrangements are preferably sequentially aligned by rotating the turntable to the ion beam ,
    [3]
    3. sample table according to claim 2, characterized in that the axis of rotation of the turntable is aligned substantially vertically.
    [4]
    4. sample table according to claim 2, characterized in that the axis of rotation of the hub is oriented substantially horizontally.
    [5]
    A sample table according to claim 1, characterized in that the sample table comprises a movable, elongated support, wherein the positioning arrangements are arranged longitudinally, preferably at regular intervals, on the elongated support and the positioning arrangements preferably by moving the support in the longitudinal direction sequentially can be aligned to the ion beam. P11V44

    -15-
    [6]
    6. sample table according to claim 5, characterized in that the support is designed as a sliding rail.
    [7]
    7. sample table according to one of claims 2 to 6, characterized in that the sample table for rotating the turntable or for moving the support has a controllable drive.
    [8]
    8. sample stage according to one of claims 1 to 7, characterized in that at least one protective separation is arranged at least between the respective one positioning arrangement, which is aligned with the ion beam of the ion beam etching, and the respective other positioning arrangements, which are remote from the ion beam.
    [9]
    9. sample table according to claim 8, characterized in that the protective separation is permanently arranged.
    [10]
    10. sample table according to claim 8, characterized in that the protective separation is arranged positionable.
    [11]
    11. sample table according to claim 10, characterized in that the positionable protective separation comprises a cover which can be opened and closed by means of a spring mechanism.
    [12]
    12. sample table according to claim 10, characterized in that the positionable protective separation comprises a cover having overlapping lamellae.
    [13]
    13. sample table according to claim 10, characterized in that the positionable protective separation comprises an open and closable cover, which is associated with a drive for opening and closing.
    [14]
    14. sample table according to one of claims 8 to 13, characterized in that each positioning arrangement is separated from the respective adjacent positioning arrangements by a protective separation.
    [15]
    15. Sample table according to one of claims 2 to 4 and 14, characterized in that exactly three positioning arrangements are arranged on the turntable at an angle of 120 °, wherein between the three positioning assemblies each one normal to the turntable and extending radially to the axis of rotation protective separation is arranged. Fl1944 b ** 4 m 9 • l * l -16-
    [16]
    16. sample table flange comprising a sample table according to one of claims 1 to 15.
    [17]
    17. A method for sequentially preparing at least two samples in an ion beam etching system, comprising the steps of: (a) attaching the samples in the at least two positioning arrangements of a sample table according to one of claims 1 to 15, manually adjusting the samples into the respective ones Positioning arrangements, (b) placing the sample stage in the recipient, (c) aligning the positioning assembly with the ion beam by moving the sample table, exposing the sample in the positioning assembly to the ion beam, while leaving the respective other positioning arrangements away from the ion beam, and processing the sample ion beam etching the sample exposed to the ion beam, (d) sequentially changing the positions by moving the sample stage and aligning the next positioning assembly with the ion beam and preparing the sample by ion beam etching, (e) repeating steps (c) and (d) until all sample n were prepared by ion beam etching, and (f) optionally repeating steps (c) to (e).
    [18]
    18. The method according to claim 17, characterized in that the changing of the positioning in step (d) takes place sequentially. Vienna, the a:; · m
    类似技术:
    公开号 | 公开日 | 专利标题
    AT510606B1|2012-05-15|DEVICE AND METHOD FOR SAMPLE PREPARATION
    DE69908868T2|2004-05-06|Device for machining holes or shapes with variable profile using an excimer laser
    EP1447656A1|2004-08-18|Specimens for transmission electron microscope
    EP1582832B1|2007-04-18|Vacuum treatment apparatus having detachable valve
    DE102010018342B4|2014-01-02|jaw chuck
    WO2010081712A1|2010-07-22|Processing machine
    DE4091603C1|1995-05-04|Device for transferring a mechanical movement into a vacuum chamber
    DE102017106261A1|2017-09-28|LAMINATE FORM DEVICE
    EP0714839A1|1996-06-05|Process for putting a can welding machine into operation or for converting the same, and a modular magazine for implementing the process
    AT513168B1|2014-08-15|Device for machining surfaces
    DE102016125278A1|2018-06-14|Apparatus, method and use for coating lenses
    DE102017118065A1|2019-02-14|Generative manufacturing plant and process for the production of components by means of this generative manufacturing plant
    DE102014220182A1|2016-04-21|Broaching tool and device for producing grooves in a workpiece
    EP2500136A1|2012-09-19|Blasting plant with a blasting cabin
    EP3194634B1|2018-06-06|Holding device for the surface treatment of bar cutters
    WO2012016878A1|2012-02-09|Device for drying workpieces after a cleaning operation
    AT519014B1|2018-03-15|Production plant with manipulation device
    EP3868917A1|2021-08-25|Device, method and use for coating lenses
    DE19816739B4|2005-05-25|Apparatus for loading and unloading a process reactor with articles, preferably wafers
    DE102018008038A1|2020-04-16|Device for attaching a sight glass to a vacuum chamber
    EP3763472A1|2021-01-13|Laser machining device and laser machining method for laser machining of wire
    DE102018127950A1|2020-05-14|Process for optimizing an object manufactured by means of a 3D printing process, process for producing a tool device
    AT517227A4|2016-12-15|Manufacturing plant for the production of workpieces made of sheet metal and methods
    DE4418161A1|1995-11-30|Appts. for performing processes of electron beam technology in vacuum
    DE1913699B2|1978-08-24|Chamber for processing a workpiece located therein in the absence of air, in particular a vacuum chamber
    同族专利:
    公开号 | 公开日
    EP2487479A2|2012-08-15|
    US8471223B2|2013-06-25|
    JP2012169270A|2012-09-06|
    JP5946284B2|2016-07-06|
    AT510606B1|2012-05-15|
    US20120199552A1|2012-08-09|
    EP2487479A3|2017-07-19|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    DE102012210003A1|2012-06-14|2013-12-19|Von Ardenne Anlagentechnik Gmbh|Collecting device, used to sputter material during ion beam etching under vacuum, comprises ion beam sources arranged on each side of substrate to be etched, and surface areas, which reflect beam generated by ion source towards substrate|US3993909A|1973-03-16|1976-11-23|U.S. Philips Corporation|Substrate holder for etching thin films|
    DE2313096A1|1973-03-16|1974-09-26|Philips Patentverwaltung|SAMPLE HOLDER FOR ETCHING THIN LAYERS|
    US4663009A|1985-02-08|1987-05-05|Hewlett-Packard Company|System and method for depositing plural thin film layers on a substrate|
    JPS6286054U|1985-11-18|1987-06-01|
    DE3725188A1|1987-07-29|1989-02-09|Siemens Ag|Semiautomatic substrate holder for thermal processes|
    JP3340603B2|1995-10-05|2002-11-05|日本電子株式会社|Sample holder for electron microscope|
    US5783830A|1996-06-13|1998-07-21|Hitachi, Ltd.|Sample evaluation/process observation system and method|
    JPH11218473A|1998-02-02|1999-08-10|Mitsubishi Electric Corp|Method and device for preparing sample for section transmission electron microscope|
    US6086727A|1998-06-05|2000-07-11|International Business Machines Corporation|Method and apparatus to improve the properties of ion beam deposited films in an ion beam sputtering system|
    JP4219295B2|2004-03-31|2009-02-04|シャープ株式会社|Ion implanter|
    JP4398396B2|2005-03-25|2010-01-13|株式会社日立ハイテクサイエンスシステムズ|Ion milling equipment|
    JP2007115706A|2006-12-14|2007-05-10|Jeol Ltd|Sample processing device|
    WO2008106815A2|2007-03-06|2008-09-12|Leica Microsysteme Gmbh|Method for the production of a sample for electron microscopy|
    JP5362236B2|2007-03-12|2013-12-11|株式会社日立ハイテクサイエンス|Sample processing / observation device and cross-section processing / observation method|
    JP4561814B2|2007-11-21|2010-10-13|Ｔｄｋ株式会社|Milling device|
    JP5490098B2|2008-04-22|2014-05-14|エーリコン・トレイディング・アーゲー・トリューバッハ|Method of manufacturing a workpiece having an ion-etched surface|US5106742A|1987-03-31|1992-04-21|Wall Monroe E|Camptothecin analogs as potent inhibitors of topoisomerase I|
    US5364858A|1987-03-31|1994-11-15|Research Triangle Institute|Camptothecin analogs as potent inhibitors of topoisomerase I|
    US5122526A|1987-03-31|1992-06-16|Research Triangle Institute|Camptothecin and analogs thereof and pharmaceutical compositions and method using them|
    US5227380A|1987-03-31|1993-07-13|Research Triangle Institute|Pharmaceutical compositions and methods employing camptothecins|
    US5180722A|1987-04-14|1993-01-19|Research Triangle Institute|10,11-methylenedioxy-20-camptothecin and 10,11-methylenedioxy-20-camptothecin analogs|
    US5552154A|1989-11-06|1996-09-03|The Stehlin Foundation For Cancer Research|Method for treating cancer with water-insoluble s-camptothecin of the closed lactone ring form and derivatives thereof|
    US8624199B2|2011-10-28|2014-01-07|Fei Company|Sample block holder|
    CN109187153B|2018-10-10|2021-08-17|中国石油大学|Compact type small punch rod sample preparation tool|
    CN110993475B|2019-12-05|2020-08-28|山东省分析测试中心|Scanning electron microscope universal rotating sample table for fracture analysis and scanning electron microscope|
    CN112345572B|2020-11-02|2022-03-01|中国科学院化学研究所|Sample transfer device and transfer method|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    ATA168/2011A|AT510606B1|2011-02-09|2011-02-09|DEVICE AND METHOD FOR SAMPLE PREPARATION|ATA168/2011A| AT510606B1|2011-02-09|2011-02-09|DEVICE AND METHOD FOR SAMPLE PREPARATION|
    EP12152134.8A| EP2487479A3|2011-02-09|2012-01-23|Device and method for preparing samples|
    US13/368,414| US8471223B2|2011-02-09|2012-02-08|Apparatus and method for sample preparation|
    JP2012024872A| JP5946284B2|2011-02-09|2012-02-08|Apparatus and method for sample preparation|
    [返回顶部]